Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2
نویسندگان
چکیده
Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2 S. Horzum,1,2,* H. Sahin,1,† S. Cahangirov,3,‡ P. Cudazzo,3,§ A. Rubio,3,| T. Serin,2,¶ and F. M. Peeters1,** 1Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium 2Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey 3Nano-Bio Spectroscopy group, Departmento Fı́sica de Materiales, Universidad del Paı́s Vasco, Centro de Fı́sica de Materiales CSIC-UPV/EHU-MPC and DIPC, Av. Tolosa 72, E-20018 San Sebastián, Spain (Received 16 December 2012; revised manuscript received 13 February 2013; published 14 March 2013)
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